? semiconductor components industries, llc, 2013 march, 2013 ? rev. 5 1 publication order number: nss1c200mz4/d nss1c200mz4, nsv1c200mz4 100 v, 2.0 a, low v ce(sat) pnp transistor on semiconductor?s e 2 poweredge family of low v ce(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (v ce(sat) ) and high current gain capability. these are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. typical applications are dc ? dc converters and power management in portable and battery powered products such as cellular and cordless phones, pdas, computers, printers, digital cameras and mp3 players. other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. in the automotive industry they can be used in air bag deployment and in the instrument cluster. the high current gain allows e 2 poweredge devices to be driven directly from pmu?s control outputs, and the linear gain (beta) makes them ideal components in analog amplifiers. features ? nsv prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these devices are pb ? free, halogen free and are rohs compliant maximum ratings (t a = 25 c) rating symbol max unit collector-emitter voltage v ceo ? 100 vdc collector-base voltage v cbo ? 140 vdc emitter-base voltage v ebo ? 7.0 vdc base current ? continuous i b 1.0 a collector current ? continuous i c 2.0 a collector current ? peak i cm 3.0 a thermal characteristics characteristic symbol max unit total device dissipation t a = 25 c derate above 25 c p d (note 1) 800 6.5 mw mw/ c thermal resistance, junction ? to ? ambient r ja (note 1) 155 c/w total device dissipation t a = 25 c derate above 25 c p d (note 2) 2.0 15.6 w mw/ c thermal resistance, junction ? to ? ambient r ja (note 2) 64 c/w junction and storage temperature range t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr ? 4 @ 7.6 mm 2 , 1 oz. copper traces. 2. fr ? 4 @ 645 mm 2 , 1 oz. copper traces. collector 2,4 1 base 3 emitter http://onsemi.com ? 100 volts, 2.0 amps pnp low v ce(sat) transistor device package shipping ? ordering information NSS1C200MZ4T1G nsv1c200mz4t1g sot ? 223 (pb ? free) 1000/ tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. sot ? 223 case 318e style 1 marking diagram top view pinout c ce b 4 123 1 1c200 ayw a = assembly location y = year w = work week 1c200 = specific device code = pb ? free package nss1c200mz4t3g sot ? 223 (pb ? free) 4000/ tape & reel pin assignment
nss1c200mz4, nsv1c200mz4 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter breakdown voltage (i c = ? 10 madc, i b = 0) v (br)ceo ? 100 vdc collector ? base breakdown voltage (i c = ? 0.1 madc, i e = 0) v (br)cbo ? 140 vdc emitter ? base breakdown voltage (i e = ? 0.1 madc, i c = 0) v (br)ebo ? 7.0 vdc collector cutoff current (v cb = ? 140 vdc, i e = 0) i cbo ? 100 nadc emitter cutoff current (v eb = ? 6.0 vdc) i ebo ? 50 nadc on characteristics dc current gain (note 3) (i c = ? 10 ma, v ce = ? 2.0 v) (i c = ? 500 ma, v ce = ? 2.0 v) (i c = ? 1.0 a, v ce = ? 2.0 v) (i c = ? 2.0 a, v ce = ? 2.0 v) h fe 150 120 80 50 360 collector ? emitter saturation voltage (note 3) (i c = ? 0.1 a, i b = ? 0.010 a) (i c = ? 0.5 a, i b = ? 0.050 a) (i c = ? 1.0 a, i b = ? 0.100 a) (i c = ? 2.0 a, i b = ? 0.200 a) v ce(sat) ? 0.040 ? 0.080 ? 0.125 ? 0.220 v base ? emitter saturation voltage (note 3) (i c = ? 1.0 a, i b = ? 0.100 a) v be(sat) ? 0.950 v base ? emitter turn ? on voltage (note 3) (i c = ? 1.0 a, v ce = ? 2.0 v) v be(on) ? 0.850 v cutoff frequency (i c = ? 100 ma, v ce = ? 5.0 v, f = 100 mhz) f t 120 mhz input capacitance (v eb = 3.0 v, f = 1.0 mhz) cibo 200 pf output capacitance (v cb = 10 v, f = 1.0 mhz) cobo 22 pf 3. pulsed condition: pulse width = 300 msec, duty cycle 2%. typical characteristics figure 1. power derating t, temperature ( c) 150 125 100 75 50 25 0 0.5 1.0 1.5 2.0 2.5 p d , power dissipation (w) t c t a
nss1c200mz4, nsv1c200mz4 http://onsemi.com 3 typical characteristics figure 2. dc current gain figure 3. dc current gain i c , collector current (a) 10 1 0.1 0.01 0.001 0 100 200 300 400 500 figure 4. collector ? emitter saturation voltage figure 5. collector ? emitter saturation voltage i c , collector current (a) 10 1 0.1 0.01 0.001 0.01 0.1 1 figure 6. base ? emitter saturation voltage figure 7. base ? emitter saturation voltage i c , collector current (a) 10 1 0.1 0.01 0.001 0.2 0.4 0.6 0.8 1.0 1.2 h fe , dc current gain v ce(sat) , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter satura- tion voltage (v) v ce = 2 v 150 c ? 55 c 25 c i c , collector current (a) 10 1 0.1 0.01 0.001 0 100 200 300 400 500 h fe , dc current gain v ce = 4 v 150 c ? 55 c 25 c i c /i b = 10 150 c ? 55 c 25 c i c , collector current (a) 10 1 0.1 0.01 0.001 0.01 0.1 1 v ce(sat) , collector ? emitter saturation voltage (v) i c /i b = 20 150 c ? 55 c 25 c i c /i b = 10 150 c ? 55 c 25 c i c , collector current (a) 10 1 0.1 0.01 0.001 0.2 0.4 0.6 0.8 1.0 1.2 v be(sat) , base ? emitter satura- tion voltage (v) i c /i b = 50 150 c ? 55 c 25 c
nss1c200mz4, nsv1c200mz4 http://onsemi.com 4 typical characteristics figure 8. base ? emitter voltage figure 9. collector saturation region i b , base current (a) 1 0.1 0.01 0.001 0.0001 0.01 0.1 1 figure 10. input capacitance figure 11. output capacitance v be , emitter base voltage (v) v cb , collector base voltage (v) 7 6 5 4 3 2 1 0 0 100 200 300 400 80 70 60 50 30 20 10 0 0 20 40 60 80 100 120 figure 12. current ? gain bandwidth product figure 13. safe operating area i c , collector current (a) v ce , collector emitter voltage (v) 1 0.1 0.01 0.001 0 20 40 60 80 100 120 100 10 1 0.01 0.1 1 10 v ce(sat) , collector ? emitter saturation voltage (v) c ib , input capacitance (pf) c ob , output capacitance (pf) f ta u , current ? gain bandwidth product (mhz) i c , collector current (a) i c , collector current (a) 10 1 0.1 0.01 0.001 0.2 0.4 0.6 0.8 1.0 1.2 v be(on) , base ? emitter voltage (v) v ce = 2 v 150 c ? 55 c 25 c t j = 25 c i c = 0.1 a 0.5 a 1.0 a 2.0 a 3.0 a 8 t j = 25 c f test = 1 mhz 40 90 100 t j = 25 c f test = 1 mhz t j = 25 c f test = 1 mhz v ce = 10 v t j = 25 c 1 ms 0.5 ms 100 ms 10 ms
nss1c200mz4, nsv1c200mz4 http://onsemi.com 5 package dimensions sot ? 223 (to ? 261) case 318e ? 04 issue n a1 b1 d e b e e1 4 123 0.08 (0003) a l1 c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inch. 1.5 0.059 mm inches scale 6:1 3.8 0.15 2.0 0.079 6.3 0.248 2.3 0.091 2.3 0.091 2.0 0.079 soldering footprint* h e dim a min nom max min millimeters 1.50 1.63 1.75 0.060 inches a1 0.02 0.06 0.10 0.001 b 0.60 0.75 0.89 0.024 b1 2.90 3.06 3.20 0.115 c 0.24 0.29 0.35 0.009 d 6.30 6.50 6.70 0.249 e 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087 0.85 0.94 1.05 0.033 0.064 0.068 0.002 0.004 0.030 0.035 0.121 0.126 0.012 0.014 0.256 0.263 0.138 0.145 0.091 0.094 0.037 0.041 nom max l1 1.50 1.75 2.00 0.060 6.70 7.00 7.30 0.264 0.069 0.078 0.276 0.287 h e ? ? e1 0 1 0 0 1 0 l l 0.20 ??? ??? 0.008 ??? ??? style 1: pin 1. base 2. collector 3. emitter 4. collector *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 nss1c200mz4/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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